JPS6146073B2 - - Google Patents
Info
- Publication number
- JPS6146073B2 JPS6146073B2 JP55127326A JP12732680A JPS6146073B2 JP S6146073 B2 JPS6146073 B2 JP S6146073B2 JP 55127326 A JP55127326 A JP 55127326A JP 12732680 A JP12732680 A JP 12732680A JP S6146073 B2 JPS6146073 B2 JP S6146073B2
- Authority
- JP
- Japan
- Prior art keywords
- detection device
- surface layer
- junction
- type
- heating step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002344 surface layer Substances 0.000 claims description 67
- 238000001514 detection method Methods 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 51
- 238000010438 heat treatment Methods 0.000 claims description 41
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 37
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052753 mercury Inorganic materials 0.000 claims description 25
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000007743 anodising Methods 0.000 claims description 14
- 230000001747 exhibiting effect Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 10
- 238000011282 treatment Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 54
- 229920002120 photoresistant polymer Polymers 0.000 description 29
- 238000002048 anodisation reaction Methods 0.000 description 21
- 238000005498 polishing Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910000474 mercury oxide Inorganic materials 0.000 description 2
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002730 mercury Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55127326A JPS6146073B2 (en]) | 1980-09-16 | 1980-09-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55127326A JPS6146073B2 (en]) | 1980-09-16 | 1980-09-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5754378A JPS5754378A (en]) | 1982-03-31 |
| JPS6146073B2 true JPS6146073B2 (en]) | 1986-10-11 |
Family
ID=14957156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55127326A Expired JPS6146073B2 (en]) | 1980-09-16 | 1980-09-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6146073B2 (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59163143A (ja) * | 1983-02-15 | 1984-09-14 | トライ・エングル システムズ リミテド | 包装容器の要素及びその形成方法 |
| JPS6332121U (en]) * | 1986-08-19 | 1988-03-02 |
-
1980
- 1980-09-16 JP JP55127326A patent/JPS6146073B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5754378A (en]) | 1982-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0175567B1 (en) | Semiconductor solar cells | |
| US4092445A (en) | Process for forming porous semiconductor region using electrolyte without electrical source | |
| JP2663048B2 (ja) | 電界発光シリコン構造の製造方法 | |
| US4206003A (en) | Method of forming a mercury cadmium telluride photodiode | |
| US4318217A (en) | Method of manufacturing an infra-red detector device | |
| JPH09191110A (ja) | ダイオードを内蔵した絶縁ゲートバイポーラトランジスタとその製造方法 | |
| JPS60231338A (ja) | 半導体構造体の製造方法 | |
| CA1128181A (en) | Semiconductor device having a number of series-arranged photosensitive cells | |
| JPS61292934A (ja) | 半導体素子の製造方法 | |
| US4081823A (en) | Semiconductor device having porous anodized aluminum isolation between elements thereof | |
| US4137544A (en) | Mercury cadmium telluride photodiode | |
| US4335504A (en) | Method of making CMOS devices | |
| US4056415A (en) | Method for providing electrical isolating material in selected regions of a semiconductive material | |
| JPS6146073B2 (en]) | ||
| US4011578A (en) | Photodiode | |
| US4247343A (en) | Method of making semiconductor integrated circuits | |
| US4627883A (en) | Method of forming an isolated semiconductor structure | |
| KR100366353B1 (ko) | 태양전지용 접합층 형성방법 | |
| US4462019A (en) | Photosensitive semiconductor resistor | |
| CA1173546A (en) | Method of manufacturing an infra-red detector device | |
| US3986904A (en) | Process for fabricating planar scr structure | |
| JPH01152761A (ja) | 固体撮像装置の製造方法 | |
| JPS5834943A (ja) | 半導体装置の製造方法 | |
| EP0062982B1 (en) | Isolated integrated circuit comprising a substrate electrode | |
| GB1600599A (en) | Infrared detector device manufacture |